Tokyo Electron

Tokyo Electron

Laboratoire d'assemblage de semi-conducteurs / Dépôt de métal / Pulvérisation verticale

Tokyo Electron

Fournisseur :

Modèle :

Fonction :

Process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles, commonly utilized for thin film deposition

CAPABILITY:

Developed for applications requiring absolutely minimal defects

due to particulate damage

Chamber dimension 7 x 23 x 69.5 inches ( D x H x W )

Pallet capacity 100/125/150/200 mm wafers

Pallet dimension 13 x 13 inches

High vacuum pump ≤ 2×10-7 Torr

Radiant heater loadlock

Up to 3 Cathodes  12 x 37.8 cm

RF generator 1.5 KW  (optional 3 KW)

DC Magnetron power supply 10 KW adjustable to 850V or 30 Amp

Scan speed (bi-directional) 2 to 400 cm/min

Etch level  0.1 to 1.5 KW

Deposition thickness uniformity across pallet for 1µm aluminum

+/- 5 % Planar using high uniformity magnets (DC or RF)

+/- 10% Planar using high utilization magnets (DC or RF)

Deposition thickness uniformity  pallet to pallet +/- 5% all cathode type

Etch uniformity (with movable shutters)

Wafer to wafer +/- 7%

Across a wafer  +/- 10%

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