CAPABILITY:

Handling wafer with diameter up to 200 mm

Maximum batch of 50 200 mm wafers

Chamber Cleanliness of Class 1

Maximum temperature of 450 Celsius

Pressure of operation at 250 Torrs

Temperature uniformity +/- 5 Celsius during dwell after stabilization period

Maximum heat-up rate of 7.5 Celsius per minute

Maximum cool-down rate of 4.5 Celsius per minute

Nitrogen environment: Oxygen concentration of 10 ppm over background