CAPABILITY:

Film thickness: 135 ± 6.7 nm, and 300 ± 45 nm

Within wafer thickness non-uniformity: 1 % (1 sigma)

Wafer-to-wafer thickness non-uniformity: 1 % (1-sigma)

Wafer size: 150 mm, 200 mm

Production wafers per load: 50 – 100

Thickness range of wafers: 300 – 1700 µm

LSN deposition rate: 1.5 nm/min

Temperature range: 600 – 800 °C

Chamber configuration : Cross-flow

Gases used: Dichlorosilane, Ammonia

Dichlorosilane mass flow control: ±0.1 sccm of the target flow-rate.

Ammonia mass flow control: ±0.1 sccm of the target flow-rate.

Automated in-situ cleaning capability using nitrogen trifluoride