CAPABILITY:

Processing 200 mm wafers and 3D-Integrated MEMS devices with wafer-level packages.

Bond 200 mm wafers using fusion bonding, glass frit bonding, adhesive bonding, eutectic bonding, thermo-compression bonding, transient liquid phase bonding, and solder bonding.

Wafer-to-wafer alignment accuracy: ± 0.4 µm (3 sigma)

Range of wafer thickness: 300 – 1700 µm

Temperature control: 20 – 550 °C ± 1.5%

Contact Force control: 1.5 – 100 kN ± 2%

Gas pressure control: 0.1 – 1000 mbar ± 5%

In-situ wafer treatment with formic acid vapour

Megasonic wafer cleaning