CAPACITY

Provides multiple critical dimensions in one measurement

2D overlay and CD metrology

Pattern recognition on 3D surface topography

Metrology possible on perforated wafers

Trench shape metrology: AR up to 15:1, ø down to 3.0 µm

TSV shape metrology: AR up to 15:1, ø down to 5.0 µm

3D defect detection (white light interferometry)

Nano-roughness metrology down to 10 nm resolution

Edge bead metrology

Single-layer film stress maps

Laser autofocus (bowed wafers)

Single sensor capable of sub-angstrom vertical resolution, independent of view

High throughput system (40wph, 5 sites/wafer, in 2D metrology)