CAPABILITY:

Film thickness: 330 ± 15 nm, 1550 ± 50 nm, and 2050 ± 75 nm

Within wafer thickness non-uniformity: 2.5% (1 sigma)

Wafer-to-wafer thickness non-uniformity: 2.5% (1-sigma)

Wafer size: 150 mm, 200 mm

Production wafers per load: 100 – 150

Thickness range of wafers: 300 – 1700 µm

ISDP deposition rate: 3.2 nm/min

Temperature range: 500 – 600 °C

Chamber configuration : Cross-flow

Gases used: Silane, Phosphine, Nitrogen

Silane mass flow control: ±0.5 sccm of the target flow-rate.

Phosphine mass flow control: ±0.1 sccm of the target flow-rate.

Automated in-situ clean using nitrogen trifluoride