Integrated microsystems laboratory (MEMS) / Thin film deposition / Low pressure chemical vapour deposition / TEOS
SPT Micro AVP-8200 TEOS
Supplier :
Model :
Purpose :
Vertical furnace for low pressure chemical vapour deposition of TEOS thin film
CAPABILITY:
Film thickness: 300 ± 30 nm, and 2000 ± 200 nm
Within wafer thickness non-uniformity: 2.5% (1 sigma)
Wafer-to-wafer thickness non-uniformity: 2.2% (1-sigma)
Wafer size: 150 mm, 200 mm
Production wafers per load: 100
Thickness range of wafers: 300 – 1700 µm
TEOS deposition rate: 6 nm/min
Chamber configuration : Cross-flow
Gases used: TEOS, Oxygen
TEOS mass flow control: ±0.1 sccm of the target flow-rate.
Automated in-situ cleaning capability using nitrogen trifluoride
