Integrated microsystems laboratory (MEMS) / Chemical / Mechanical Polishing / Polishing and planarisation
Strasbaugh STB P300 6EH
Supplier :
Model :
Purpose :
Polishing silicon, silicon dioxide, copper and tungsten on 200 mm wafers
CAPABILITY:
Automated wafer handling
Compatible cleaning modules for copper/tungsten through-silicon-via processes
Standard silicon and polysilicon polishing
Standard silicon oxide polishing and planarization
Standard copper planarization
Standard tungsten planarization
Thickness range of wafers: 300 – 1200 µm
Post-CMP wafer-to-wafer thickness non-uniformity: 9% (3 sigma)
Post-CMP polishing within wafer thickness non-uniformity: 15% (3 sigma)
In-situ metrology with end-point detection
Dry-in, dry-out with in-situ clean operation
Double-side scrub, megasonic clean
Bulk delivery of slurries and chemicals
