At C2MI, the Versalis tool from SPTS has several chambers allowing different types of plasma etchings. The Rapier module, used for Deep Reactive Ion Etching of silicon. Using a patented dual plasma source with independently controlled primary and secondary decoupled plasma zone, the etching rate in this chamber can reach 17 um per minute. Fully vertical 90-degrees profiles are achievable with aspect ratios up to 100 to 1.