CAPABILITY: Film thickness: 135 ± 6.7 nm, and 300 ± 45 nm Within wafer thickness non-uniformity: 1 % (1 sigma)
CAPABILITY: Wafer size: 200 mm Thickness range of wafers: 300 – 1200 µm Temperature range: 100 – 400 °C Pressure
CAPABILITY: Thermal oxide thickness: 140 ± 6 nm, and 900 ± 20 nm Within wafer thickness non-uniformity: 0.5% (1 sigma)
CAPABILITY: Film thickness: 300 ± 30 nm, and 2000 ± 200 nm Within wafer thickness non-uniformity: 2.5% (1 sigma) Wafer-to-wafer
CAPABILITY: Film thickness: 330 ± 15 nm, 1550 ± 50 nm, and 2050 ± 75 nm Within wafer thickness non-uniformity: