CAPABILITY: Isopod – In situ resist removal In situ strip for corrosion prevention Isotropic polymide removal (dry release)

CAPABILITY: Dry-in/dry-out automated SMIF pod input/output operation; Mini-environment within wet bench secures class 1 clean room performance on the wafer

CAPABILITY: Choice of plasma sources Forming gas 3.5% provides the advantage of catalysis for generation of atomic oxygen in plasma

CAPABILITY: Wafer size: 200 mm Thickness range of wafers: 300 – 1200 µm Wafer material: Silicon, Glass Fully qualified for

CAPABILITY: Wafer size: 200 mm Thickness range of wafers: 300 – 1200 µm Wafer material: Silicon, Glass, Bonded wafers Processes:

CAPABILITY: Automated wafer handling Compatible cleaning modules for copper/tungsten through-silicon-via processes Standard silicon and polysilicon polishing Standard silicon oxide polishing

CAPABILITY: Thermal oxide thickness: 140 ± 6 nm, and 900 ± 20 nm Within wafer thickness non-uniformity: 0.5% (1 sigma)

CAPABILITY: Wafer size: 200 mm Production wafers per load: 50 Thickness range of wafers: 300 – 1700 µm Temperature range: 

CAPABILITY: Wafer size: 200 mm Production wafers per load: 50 Thickness range of wafers: 300 – 1700 µm Temperature range: 

CAPABILITY: Processing 200 mm wafers and 3D-Integrated MEMS devices with wafer-level packages. Bond 200 mm wafers using fusion bonding, glass